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Kimmo Niskanen

Henkilökunnan yhteystiedot saatavilla yliopiston yhteystietohausta.

ORCID-linkki: https://orcid.org/0000-0003-1083-1273

Aktiiviset JYU-affiliaatiot

Fysiikan laitos, Tutkijatohtori

Julkaisut ja muut tuotokset

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs (2024) Germanicus, Rosine Coq; et al.; A1; OA
SiC MOSFET structure at the die level with AFM sMIM Mode (2024) Coq Germanicus, Rosine; et al.; A4; 979-8-3503-7560-2
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs (2023) Niskanen, Kimmo; et al.; A1; OA
Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET (2023) Niskanen, Kimmo; et al.; A1; OA
SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels (2023) Coq Germanicus, Rosine; et al.; D3; OA
Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs (2023) Söderström, Daniel; et al.; A1; OA
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs (2022) Martinella, C.; et al.; A1; OA
Impact of Aging Degradation on Heavy-ion SEU Response of 28 nm UTBB FD-SOI Technology (2022) Mounir Mahmoud, M.; et al.; A1

Tutkimusaineiston tekijä

JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs (2024) Niskanen, Kimmo; et al.