Direct laser writing of electronic devices on graphene by two-photon oxidation and nitrogen doping
Main funder
Funder's project number: 311330
Funds granted by main funder (€)
- 590 610,00
Funding program
Project timetable
Project start date: 01/09/2017
Project end date: 31/08/2021
Summary
In this project, we develop a whole new concept for laser-induced patterning, band gap tailoring and chemical doping of graphene by using laser induced two-photon functionalization (TPF). We will use two-photon oxidation (TPO) of graphene to fabricate electronic devices. Additionally, we will investigate nitrogen-doping of graphene by direct laser writing. Oxidation and nitrogen-doping will be utilized together for fabricating a p-n junction on graphene. The developed methodology enables direct laser writing of various devices on graphene at room temperature and ambient air without the need for any additional chemical or physical processing. We further develop this technology to a mass production capability by developing fast optical writing methods. This proof-of-principle work will enable utilization of the developed methods in a multitude of applications in flexible and transparent electronics based on all-graphene technology.
Principal Investigator
Other persons related to this project (JYU)
Primary responsible unit
Follow-up groups
Related publications and other outputs
- Area‐Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation (2022) Mentel, Kamila K.; et al.; A1; OA
- Deterministic Modification of CVD Grown Monolayer MoS2 with Optical Pulses (2021) Turunen, Mikko T.; et al.; A1; OA
- Shaping graphene with optical forging : from a single blister to complex 3D structures (2021) Mentel, Kamila K.; et al.; A1; OA
- Ultrastiff graphene (2021) Hiltunen, Vesa-Matti; et al.; A1; OA
- Making Graphene Luminescent by Direct Laser Writing (2020) Hiltunen, Vesa-Matti; et al.; A1; OA
- Optically Forged Diffraction-Unlimited Ripples in Graphene (2018) Koskinen, Pekka; et al.; A1; OA
