Direct laser writing of electronic devices on graphene by two-photon oxidation and nitrogen doping


Main funder

Funder's project number: 311330


Funds granted by main funder (€)

  • 590 610,00


Funding program


Project timetable

Project start date: 01/09/2017

Project end date: 31/08/2021


Summary

In this project, we develop a whole new concept for laser-induced patterning, band gap tailoring and chemical doping of graphene by using laser induced two-photon functionalization (TPF). We will use two-photon oxidation (TPO) of graphene to fabricate electronic devices. Additionally, we will investigate nitrogen-doping of graphene by direct laser writing. Oxidation and nitrogen-doping will be utilized together for fabricating a p-n junction on graphene. The developed methodology enables direct laser writing of various devices on graphene at room temperature and ambient air without the need for any additional chemical or physical processing. We further develop this technology to a mass production capability by developing fast optical writing methods. This proof-of-principle work will enable utilization of the developed methods in a multitude of applications in flexible and transparent electronics based on all-graphene technology.


Principal Investigator


Other persons related to this project (JYU)


Primary responsible unit


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Last updated on 2021-17-03 at 12:05