A1 Journal article (refereed)
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs (2022)

Martinella, C., Natzke, P., Alia, R.G., Kadi, Y., Niskanen, K., Rossi, M., Jaatinen, J., Kettunen, H., Tsibizov, A., Grossner, U., & Javanainen, A. (2022). Heavy-ion induced single event effects and latent damages in SiC power MOSFETs. Microelectronics Reliability, 128, Article 114423. https://doi.org/10.1016/j.microrel.2021.114423

JYU authors or editors

Publication details

All authors or editors: Martinella, C.; Natzke, P.; Alia, R.G.; Kadi, Y.; Niskanen, K.; Rossi, M.; Jaatinen, J.; Kettunen, H.; Tsibizov, A.; Grossner, U.; et al.

Journal or series: Microelectronics Reliability

ISSN: 0026-2714

eISSN: 1872-941X

Publication year: 2022

Volume: 128

Article number: 114423

Publisher: Elsevier

Publication country: United Kingdom

Publication language: English

DOI: https://doi.org/10.1016/j.microrel.2021.114423

Publication open access: Openly available

Publication channel open access: Partially open access channel

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/78842

Publication is parallel published: https://cds.cern.ch/record/2791566

Abstract

The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and scanning electron microscopy (SEM) were used to investigate the damage site. Finally, a summary of the different types of damage induced by the heavy ion in SiC MOSFETs is given as a function of the ion LET and operational bias.

Keywords: radiation physics; ionising radiation; semiconductors; electronic components; transistors

Free keywords: SiC MOSFETs; Heavy-ion; Latent damage; SEEs

Contributing organizations

Ministry reporting: Yes

Reporting Year: 2022

Preliminary JUFO rating: 1