A1 Journal article (refereed)
Neutron-induced effects on a self-refresh DRAM (2022)


Matana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability, 128, Article 114406. https://doi.org/10.1016/j.microrel.2021.114406


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Publication details

All authors or editorsMatana, Luza Lucas; Söderström, Daniel; Puchner, Helmut; Alía, Rubén García; Letiche, Manon; Cazzaniga, Carlo; Bosio, Alberto; Dilillo, Luigi

Journal or seriesMicroelectronics Reliability

ISSN0026-2714

eISSN1872-941X

Publication year2022

Volume128

Article number114406

PublisherElsevier

Publication countryUnited Kingdom

Publication languageEnglish

DOIhttps://doi.org/10.1016/j.microrel.2021.114406

Publication open accessNot open

Publication channel open access

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/84102


Abstract

The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.


Keywordsradiation physicsparticle radiationneutronselectronic componentsrandom access memories

Free keywordsNeutron; Self-refresh; DRAM; SEE; Stuck bits; HyperRAM


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Ministry reportingYes

Reporting Year2022

JUFO rating1


Last updated on 2024-26-03 at 09:20