A1 Journal article (refereed)
Neutron-induced effects on a self-refresh DRAM (2022)
Matana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability, 128, Article 114406. https://doi.org/10.1016/j.microrel.2021.114406
JYU authors or editors
Publication details
All authors or editors: Matana, Luza Lucas; Söderström, Daniel; Puchner, Helmut; Alía, Rubén García; Letiche, Manon; Cazzaniga, Carlo; Bosio, Alberto; Dilillo, Luigi
Journal or series: Microelectronics Reliability
ISSN: 0026-2714
eISSN: 1872-941X
Publication year: 2022
Volume: 128
Article number: 114406
Publisher: Elsevier
Publication country: United Kingdom
Publication language: English
DOI: https://doi.org/10.1016/j.microrel.2021.114406
Publication open access: Not open
Publication channel open access:
Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/84102
Abstract
The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.
Keywords: radiation physics; particle radiation; neutrons; electronic components; random access memories
Free keywords: Neutron; Self-refresh; DRAM; SEE; Stuck bits; HyperRAM
Contributing organizations
Related projects
- Radiation and Reliability Challenges for Electronics Used in Space, Aviation, Ground and Accelerators
- Virtanen, Ari
- European Commission
Ministry reporting: Yes
Reporting Year: 2022
JUFO rating: 1