A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Neutron-induced effects on a self-refresh DRAM (2022)

Matana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability, 128, Article 114406. https://doi.org/10.1016/j.microrel.2021.114406

JYU-tekijät tai -toimittajat

Söderström, Daniel

Julkaisun tiedot

Julkaisun kaikki tekijät tai toimittajat: Matana, Luza Lucas; Söderström, Daniel; Puchner, Helmut; Alía, Rubén García; Letiche, Manon; Cazzaniga, Carlo; Bosio, Alberto; Dilillo, Luigi

Lehti tai sarja: Microelectronics Reliability

ISSN: 0026-2714

eISSN: 1872-941X

Julkaisuvuosi: 2022

Volyymi: 128

Artikkelinumero: 114406

Kustantaja: Elsevier

Julkaisumaa: Britannia

Julkaisun kieli: englanti

DOI: https://doi.org/10.1016/j.microrel.2021.114406

Julkaisun avoin saatavuus: Ei avoin

Julkaisukanavan avoin saatavuus: 

Julkaisu on rinnakkaistallennettu (JYX): https://jyx.jyu.fi/handle/123456789/84102

Tiivistelmä

The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.

YSO-asiasanat: säteilyfysiikka; hiukkassäteily; neutronit; elektroniikkakomponentit; käyttömuistit

Vapaat asiasanat: Neutron; Self-refresh; DRAM; SEE; Stuck bits; HyperRAM

Liittyvät organisaatiot

Hankkeet, joissa julkaisu on tehty

OKM-raportointi: Kyllä

Raportointivuosi: 2022

JUFO-taso: 1