A1 Journal article (refereed)
Neutron-induced effects on a self-refresh DRAM (2022)

Matana, L. L., Söderström, D., Puchner, H., Alía, R. G., Letiche, M., Cazzaniga, C., Bosio, A., & Dilillo, L. (2022). Neutron-induced effects on a self-refresh DRAM. Microelectronics Reliability, 128, Article 114406. https://doi.org/10.1016/j.microrel.2021.114406

JYU authors or editors

Publication details

All authors or editors: Matana, Luza Lucas; Söderström, Daniel; Puchner, Helmut; Alía, Rubén García; Letiche, Manon; Cazzaniga, Carlo; Bosio, Alberto; Dilillo, Luigi

Journal or series: Microelectronics Reliability

ISSN: 0026-2714

eISSN: 1872-941X

Publication year: 2022

Volume: 128

Article number: 114406

Publisher: Elsevier

Publication country: United Kingdom

Publication language: English

DOI: https://doi.org/10.1016/j.microrel.2021.114406

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/84102


The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.

Keywords: radiation physics; particle radiation; neutrons; electronic components; random access memories

Free keywords: Neutron; Self-refresh; DRAM; SEE; Stuck bits; HyperRAM

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Related projects

Ministry reporting: Yes

Reporting Year: 2022

JUFO rating: 1

Last updated on 2023-03-10 at 12:06