A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes (2021)


Krevchik, V.D., Razumov, A.V., Semenov, M.B., Moyko, I.M., & Shorokhov, A.V. (2021). Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes. Nanosistemy : Fizika, Himia, Matematika, 12(6), 680-689. https://doi.org/10.17586/2220-8054-2021-12-6-680-689


JYU-tekijät tai -toimittajat


Julkaisun tiedot

Julkaisun kaikki tekijät tai toimittajatKrevchik, V.D.; Razumov, A.V.; Semenov, M.B.; Moyko, I.M.; Shorokhov, A.V.

Lehti tai sarjaNanosistemy : Fizika, Himia, Matematika

ISSN2220-8054

eISSN2305-7971

Julkaisuvuosi2021

Ilmestymispäivä31.12.2021

Volyymi12

Lehden numero6

Artikkelin sivunumerot680-689

KustantajaITMO University

JulkaisumaaVenäjä

Julkaisun kielienglanti

DOIhttps://doi.org/10.17586/2220-8054-2021-12-6-680-689

Julkaisun avoin saatavuusAvoimesti saatavilla

Julkaisukanavan avoin saatavuusKokonaan avoin julkaisukanava

Julkaisu on rinnakkaistallennettu (JYX)https://jyx.jyu.fi/handle/123456789/79722


Tiivistelmä

Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes
“A++e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A+-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A+-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from the ground state of a quantum dot to the A+-state of the impurity center, has been investigated in the adiabatic approximation. “Dips” in the temperature dependence of the SIRR have been revealed, which are associated with the presence of resonant tunneling at certain values of temperature and strength of the external electric field, for which the double-well oscillatory potential becomes symmetric.


YSO-asiasanatnanorakenteetpuolijohteetlämpötilakvanttifysiikka

Vapaat asiasanatspectral intensity of recombination radiation; quasi-zero-dimensional structure; impurity complexes; quantum dots


Liittyvät organisaatiot

JYU-yksiköt:


OKM-raportointiKyllä

VIRTA-lähetysvuosi2021

JUFO-taso1


Viimeisin päivitys 2024-22-04 klo 22:10