A4 Article in conference proceedings
Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam (2019)

Söderström, D., Matana Luza, L., Bosser, A., Gil, T., Voss, K.-O., Kettunen, H., Javanainen, A., & Dilillo, L. (2019). Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam. In RADECS 2019 : Proceedings of the 19th European Conference on Radiation and Its Effects on Components and Systems. IEEE. https://doi.org/10.1109/RADECS47380.2019.9745715

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Publication details

All authors or editors: Söderström, Daniel; Matana Luza, Lucas; Bosser, Alexandre; Gil, Thierry; Voss, Kay-Obbe; Kettunen, Heikki; Javanainen, Arto; Dilillo, Luigi

Parent publication: RADECS 2019 : Proceedings of the 19th European Conference on Radiation and Its Effects on Components and Systems

Place and date of conference: Montpellier, France, 16.-20.9.2019

ISBN: 978-1-7281-5700-9

eISBN: 978-1-7281-5699-6

ISSN: 0379-6566

eISSN: 1609-0438

Publication year: 2019

Publication date: 04/04/2022

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/RADECS47380.2019.9745715

Publication open access: Not open

Publication channel open access: 

Abstract

Stuck and weakened bits in the ISSI 512 Mb SDRAM was investigated in irradiation experiments with a heavy ion microbeam in the GSI facility. Delidded memories were tested in gold and calcium ion beams at 4.8 MeV/u, and stuck bits in the memory from the irradiation were investigated. To study weakened but not fully stuck bits after irradiation, parameters such as the refresh frequency of the memories was varied. The effect on the number of stuck bits from reading and writing the memory was studied, as well as the effect from waiting a time span between writing and reading the memory. These parameters were found to matter in the observed number of errors in the memory. Data on the findings from the microbeam irradiation from tests with different test modes are presented in this paper regarding suck bits and bit upsets. The test modes include dynamic March test and data retention tests with only refresh operations during irradiation.

Keywords: radiation physics; ionising radiation; memories (computing); random access memories

Free keywords: radiation effects; gold; calcium; Europe; writing; ions; SDRAM; microbeam; radiation effects; stuck bits; weak bits

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