A1 Journal article (refereed)
On Erbium Lattice Location in Ion Implanted Si0.75Ge0.25 Alloy: Computer Simulation of Rutherford Backscattering/channelling (2003)

Touboltsev, V., Jalkanen, P., Räisänen, J., & Smulders, P.J.M. (2003). On Erbium Lattice Location in Ion Implanted Si0.75Ge0.25 Alloy: Computer Simulation of Rutherford Backscattering/channelling. J. Appl. Phys., 93(7), 3668. https://doi.org/10.1063/1.1555269

JYU authors or editors

Publication details

All authors or editors: Touboltsev, Vladimir; Jalkanen, Pasi; Räisänen, Jyrki; Smulders, P.J.M.

Journal or series: J. Appl. Phys.

Publication year: 2003

Volume: 93

Issue number: 7

Pages range: 3668

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1063/1.1555269

Publication open access: Not open

Publication channel open access: 

Free keywords: materiaalifysiikka

Contributing organizations

Ministry reporting: Yes

Preliminary JUFO rating: Not rated