A1 Journal article (refereed)
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation (2022)
Roed, K., Eriksen, D. O., Ceccaroli, B., Martinella, C., Javanainen, A., Reshanov, S., & Massetti, S. (2022). Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation. IEEE Transactions on Nuclear Science, 69(7), 1675-1682. https://doi.org/10.1109/tns.2022.3173061
JYU authors or editors
Publication details
All authors or editors: Roed, Ketil; Eriksen, Dag Oistein; Ceccaroli, Bruno; Martinella, Corinna; Javanainen, Arto; Reshanov, Sergey; Massetti, Silvia
Journal or series: IEEE Transactions on Nuclear Science
ISSN: 0018-9499
eISSN: 1558-1578
Publication year: 2022
Volume: 69
Issue number: 7
Pages range: 1675-1682
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Publication country: United States
Publication language: English
DOI: https://doi.org/10.1109/tns.2022.3173061
Publication open access: Openly available
Publication channel open access: Partially open access channel
Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/81077
Abstract
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower LET. Slightly higher reverse bias threshold values for leakage current degradation was also observed compared to previously published work.
Keywords: radiation physics; ionising radiation; electronic components; semiconductors; diodes
Free keywords: Schottky diodes; silicon carbide; monoisotopic; heavy ion irradiation; single event effects; single event burnout; leakage current degradation
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2022
JUFO rating: 1
