A1 Journal article (refereed)
Radiation hardness of czochralski silicon, float zone silicon and oxygenated float zone silicon studied by low energy protons (2004)

Härkönen, J., Tuovinen, E., Luukka, P., Tuominen, E., Lassila-Perini, K., Mehtälä, P., Nummela, S., Nysten, J., Zibellini, A., Li, Z., Fretwurst, E., Lindström, G., Stahl, J., Honniger, F., Eremin, V., Ivanov, A., Verbitskaya, E., Heikkilä, P., Ovchinnikov, V., . . . Virtanen, A. (2004). Radiation hardness of czochralski silicon, float zone silicon and oxygenated float zone silicon studied by low energy protons. Nucl. Instr. Meth. A 518,. https://doi.org/10.1016/j.nima.2003.11.018

JYU authors or editors

Publication details

All authors or editors: Härkönen, J.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Lassila-Perini, K.; Mehtälä, P.; Nummela, Saara; Nysten, J.; Zibellini, A.; Li, Zhenyi; et al.

Journal or series: Nucl. Instr. Meth. A 518,

Publication year: 2004

Publication language: Finnish

DOI: https://doi.org/10.1016/j.nima.2003.11.018

Publication open access: Not open

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Additional information: J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen, K. Lassila-Perini, P. Mehtälä, S. Nummela, J. Nysten, A. Zibellini, Z. Li, E. Fretwurst, G. Lindström, J. Stahl, F. Honniger, V. Eremin, A. Ivanov, E. Verbitskaya, P. Heikkilä, V. Ovchinnikov, M. Yli-Koski, P. Laitinen, A. Pirojenko, I. Riihimäki, and A. Virtanen Radiation hardness of czochralski silicon, float zone silicon and oxygenated float zone silicon studied by low energy protons Nucl. Instr. Meth. A 518, 1-2 (2004) 346

Free keywords: czochralski silicon

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