A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Impact of Aging Degradation on Heavy-ion SEU Response of 28 nm UTBB FD-SOI Technology (2022)
Mounir Mahmoud, M., Prinzie, J., Söderström, D., Niskanen, K., Pouget, V., Cathelin, A., Clerc, S., & Leroux, P. (2022). Impact of Aging Degradation on Heavy-ion SEU Response of 28 nm UTBB FD-SOI Technology. IEEE Transactions on Nuclear Science, 69(8), 1865-1875. https://doi.org/10.1109/TNS.2022.3189802
JYU-tekijät tai -toimittajat
Julkaisun tiedot
Julkaisun kaikki tekijät tai toimittajat: Mounir Mahmoud, M.; Prinzie, J.; Söderström, D.; Niskanen, K.; Pouget, V.; Cathelin, A.; Clerc, S.; Leroux, P.
Lehti tai sarja: IEEE Transactions on Nuclear Science
ISSN: 0018-9499
eISSN: 1558-1578
Julkaisuvuosi: 2022
Ilmestymispäivä: 11.07.2022
Volyymi: 69
Lehden numero: 8
Artikkelin sivunumerot: 1865-1875
Kustantaja: Institute of Electrical and Electronics Engineers (IEEE)
Julkaisumaa: Yhdysvallat (USA)
Julkaisun kieli: englanti
DOI: https://doi.org/10.1109/TNS.2022.3189802
Julkaisun avoin saatavuus: Ei avoin
Julkaisukanavan avoin saatavuus:
Tiivistelmä
Integrated circuits (ICs) are a keystone for most critical applications operating in high level radiation environments, spanning from high energy nuclear applications up to space applications. The long-term reliability of these applications is essential for safe operation. However, the radiation effects for ICs are commonly investigated using fresh circuits, leaving the coupled effect of radiation and aging degradation unknown. This paper investigates the impact of negative bias temperature instability (NBTI) aging degradation mechanism on the heavy-ion single event upset (SEU) radiation susceptibility of 28 nm ultra-thin body and buried oxide (UTBB) fully depleted silicon on insulator (FD-SOI) technology using a custom designed test vehicle. NBTI aging degradation mechanism has been experimentally proven to increase the SEU sensitivity up to 2X for 28 nm UTBB FD-SOI flip-flops. A comprehensive framework is presented to analyze the underlying mechanisms for the impact of NBTI, that includes NBTI aging mechanism modeling, SEU SPICE simulation, TCAD irradiation simulation, and Monte-Carlo simulation of radiation effects. The framework offered a quantitative prediction to the effect of NBTI degradation mechanism on the heavy-ion SEU radiation sensitivity.
YSO-asiasanat: säteilyfysiikka; ionisoiva säteily; ionit; mikropiirit; puolijohteet
Vapaat asiasanat: aging degradation; CMOS; FD-SOI; heavy-ion; Monte-Carlo; negative bias temperature instability (NBTI); single event upset (SEU); SPICE; TCAD
Liittyvät organisaatiot
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OKM-raportointi: Kyllä
Raportointivuosi: 2022
JUFO-taso: 1
