A1 Journal article (refereed)
Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination (2022)


Huang, Y.-T., Kavanagh, S. R., Righetto, M., Rusu, M., Levine, I., Unold, T., Zelewski, S. J., Sneyd, A. J., Zhang, K., Dai, L., Britton, A. J., Ye, J., Julin, J., Napari, M., Zhang, Z., Xiao, J., Laitinen, M., Torrente-Murciano, L., Stranks, S. D., . . . Hoye, R. L. Z. (2022). Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination. Nature Communications, 13, Article 4960. https://doi.org/10.1038/s41467-022-32669-3


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Publication details

All authors or editorsHuang, Yi-Teng; Kavanagh, Seán R.; Righetto, Marcello; Rusu, Marin; Levine, Igal; Unold, Thomas; Zelewski, Szymon J.; Sneyd, Alexander J.; Zhang, Kaiwen; Dai, Linjie; et al.

Journal or seriesNature Communications

eISSN2041-1723

Publication year2022

Publication date24/08/2022

Volume13

Article number4960

PublisherNature Publishing Group

Publication countryUnited Kingdom

Publication languageEnglish

DOIhttps://doi.org/10.1038/s41467-022-32669-3

Publication open accessOpenly available

Publication channel open accessOpen Access channel

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/82859


Abstract

I-V-VI2 ternary chalcogenides are gaining attention as earth-abundant, nontoxic, and air-stable absorbers for photovoltaic applications. However, the semiconductors explored thus far have slowly-rising absorption onsets, and their charge-carrier transport is not well understood yet. Herein, we investigate cation-disordered NaBiS2 nanocrystals, which have a steep absorption onset, with absorption coefficients reaching >105 cm−1 just above its pseudo-direct bandgap of 1.4 eV. Surprisingly, we also observe an ultrafast (picosecond-time scale) photoconductivity decay and long-lived charge-carrier population persisting for over one microsecond in NaBiS2 nanocrystals. These unusual features arise because of the localised, non-bonding S p character of the upper valence band, which leads to a high density of electronic states at the band edges, ultrafast localisation of spatially-separated electrons and holes, as well as the slow decay of trapped holes. This work reveals the critical role of cation disorder in these systems on both absorption characteristics and charge-carrier kinetics.


Keywordsnanomaterialscrystalsthin filmsbismuthphotoelectric cells


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Ministry reportingYes

Reporting Year2022

JUFO rating3


Last updated on 2024-03-04 at 21:46