G5 Doctoral dissertation (article)
Hydrogen incorporation in Al2O3 thin films grown by atomic layer deposition (2022)
Atomikerroskasvatuksella valmistettujen Al2O3 ja ZnO ohutkalvojen vetyepäpuhtaudet

Kinnunen, S. (2022). Hydrogen incorporation in Al2O3 thin films grown by atomic layer deposition [Doctoral dissertation]. University of Jyväskylä. JYU dissertations, 558. http://urn.fi/URN:ISBN:978-951-39-9198-2

JYU authors or editors

Publication details

All authors or editors: Kinnunen, Sami

eISBN: 978-951-39-9198-2

Journal or series: JYU dissertations

eISSN: 2489-9003

Publication year: 2022

Number in series: 558

Number of pages in the book: 1 verkkoaineisto (69 sivua, 31 sivua useina numerointijaksoina, 14 numeroimatonta sivua)

Publisher: University of Jyväskylä

Place of Publication: Jyväskylä

Publication country: Finland

Publication language: English

Persistent website address: http://urn.fi/URN:ISBN:978-951-39-9198-2

Publication open access: Openly available

Publication channel open access: Open Access channel

Abstract

Atomic layer deposition (ALD) is a novel deposition technique that produces thin and conformal films even on high aspect ratio structures and objects with subnanometer thickness precision. Applications of ALD range from semiconductor industry to packaging and medicine. In this thesis, two metal oxides, Al2O3 and ZnO, were deposited using both temporal and spatial ALD. While temporal ALD is more established deposition method, spatial ALD offers higher throughput and a possibility to deposit thin flms on larger substrates. In this study Al2O3 and ZnO were deposited using trimethylaluminium (TMA) and diethylzinc (DEZ), respectively, and using water as an oxygen source. Both Al2O3 and ZnO are common and widely studied ALD materials and the reaction mechanism of these materials are thought to be well understood. However, nonideal conditions such as low deposition temperature or fast deposition can lead to high impurity concentrations. In this thesis precursors containing rare isotopes, namely deuterium (2H) and 18O, were used to study the impurity incorporation with different deposition conditions. It was found out that the impurity hydrogen incorporation depends on the deposition temperature as well as from purging time between the precursor pulses. At low temperatures and when short purges are used, hydrogen in the flm originates mainly from metal precursor. The opposite is true for the high temperatures and long purging times. Similar conclusions apply for both temporal and spatial ALD.

Keywords: atomic layer deposition; aluminum oxide; zinc oxide; thin films; impurities; hydrogen; doctoral dissertations

Free keywords: ALD; Al2O3; ZnO; ToF-ERDA; heavy water

Contributing organizations

Ministry reporting: Yes

VIRTA submission year: 2022