A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition (2022)
Ylivaara, O. M. E., Langner, A., Ek, S., Malm, J., Julin, J., Laitinen, M., Ali, S., Sintonen, S., Lipsanen, H., Sajavaara, T., & Puurunen, R. L. (2022). Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition. Journal of Vacuum Science and Technology A, 40(6), Article 062414. https://doi.org/10.1116/6.0002095
JYU-tekijät tai -toimittajat
Julkaisun tiedot
Julkaisun kaikki tekijät tai toimittajat: Ylivaara, Oili M. E.; Langner, Andreas; Ek, Satu; Malm, Jari; Julin, Jaakko; Laitinen, Mikko; Ali, Saima; Sintonen, Sakari; Lipsanen, Harri; Sajavaara, Timo; et al.
Lehti tai sarja: Journal of Vacuum Science and Technology A
ISSN: 0734-2101
eISSN: 1520-8559
Julkaisuvuosi: 2022
Ilmestymispäivä: 18.11.2022
Volyymi: 40
Lehden numero: 6
Artikkelinumero: 062414
Kustantaja: American Vacuum Society
Julkaisumaa: Yhdysvallat (USA)
Julkaisun kieli: englanti
DOI: https://doi.org/10.1116/6.0002095
Linkki tutkimusaineistoon: http://doi.org/10.5281/zenodo.7105571
Julkaisun avoin saatavuus: Avoimesti saatavilla
Julkaisukanavan avoin saatavuus: Osittain avoin julkaisukanava
Julkaisu on rinnakkaistallennettu (JYX): https://jyx.jyu.fi/handle/123456789/84157
Tiivistelmä
In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues at device level or even device failure. In this work, residual stress and the role of intrinsic stress in ALD Al2O3 films grown from Me3Al and H2O, O3, or O2 (plasma ALD) were studied via post-ALD thermal processing. Thermal expansion coefficient was determined using thermal cycling and the double substrate method. For some samples, post-ALD thermal annealing was done in nitrogen at 300, 450, 700, or 900 °C. Selected samples were also studied for crystallinity, composition, and optical properties. Samples that were thermally annealed at 900 °C had increased residual stress value (1400–1600 MPa) upon formation of denser Al2O3 phase. The thermal expansion coefficient varied somewhat between Al2O3 made using different oxygen precursors. For thermal-Al2O3, intrinsic stress decreased with increasing growth temperature. ALD Al2O3 grown with plasma process had the lowest intrinsic stress. The results show that ALD Al2O3 grown at 200 and 300 °C is suitable for applications, where films are exposed to post-ALD thermal processing even at temperature of 700 °C without a major change in optical properties or residual stress.
YSO-asiasanat: ohutkalvot; alumiinioksidi; atomikerroskasvatus; lämpökäsittely; jäännösjännitykset; optiset ominaisuudet
Vapaat asiasanat: atomic layer deposition; ALD
Liittyvät organisaatiot
OKM-raportointi: Kyllä
VIRTA-lähetysvuosi: 2022
Alustava JUFO-taso: 1
