A1 Journal article (refereed)
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs (2023)


Niskanen, K., Kettunen, H., Lahti, M., Rossi, M., Jaatinen, J., Söderström, D., & Javanainen, A. (2023). Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 70(4), 456-461. https://doi.org/10.1109/tns.2023.3242335


JYU authors or editors


Publication details

All authors or editors: Niskanen, Kimmo; Kettunen, Heikki; Lahti, Mikko; Rossi, Mikko; Jaatinen, Jukka; Söderström, Daniel; Javanainen, Arto

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2023

Publication date: 03/02/2023

Volume: 70

Issue number: 4

Pages range: 456-461

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/tns.2023.3242335

Publication open access: Openly available

Publication channel open access: Partially open access channel

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/85400


Abstract

The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour.


Keywords: ionising radiation; electrons; electronic components; transistors; radiation physics

Free keywords: logic gates; silicon carbide; stress; electric breakdown; radiation effects; MOSFET; degradation


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2023

Preliminary JUFO rating: 1


Last updated on 2024-22-04 at 20:11