A1 Journal article (refereed)
Strain effects in phosphorus bound exciton transitions in silicon (2023)

Loippo, T., Kanniainen, A., & Muhonen, J. T. (2023). Strain effects in phosphorus bound exciton transitions in silicon. Physical Review Materials, 7(1), Article 016202. https://doi.org/10.1103/PhysRevMaterials.7.016202

JYU authors or editors

Loippo, Teemu
Kanniainen, Antti
Muhonen, Juha

Publication details

All authors or editors: Loippo, Teemu; Kanniainen, Antti; Muhonen, Juha T.

Journal or series: Physical Review Materials

ISSN: 2476-0455

eISSN: 2475-9953

Publication year: 2023

Publication date: 31/01/2023

Volume: 7

Issue number: 1

Article number: 016202

Publisher: American Physical Society (APS)

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1103/PhysRevMaterials.7.016202

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/85974

Abstract

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in the bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detection. As these electrodes will inevitably cause strain in the silicon lattice, it will be crucial to understand how strain affects the exciton transitions. Here we study the phosphorus donor bound exciton transitions in silicon using hybrid electro-optical readout with microfabricated electrodes. We observe a significant zero-field splitting as well as mixing of the hole states due to strain. We can model these effects assuming the known asymmetry of the hole g factors and the Pikus-Bir Hamiltonian describing the strain. In addition, we describe the temperature, laser power, and light polarization dependence of the transitions. Importantly, the hole mixing should not prevent donor electron spin readout, and using our measured parameters and numerical simulations, we anticipate that hybrid spin readout on a silicon-on-insulator platform should be possible, allowing integration into silicon photonics platforms.

Keywords: semiconductors; silicon; doping (semiconductor technology); phosphorus; microstructures; spin (quantum mechanics); photonics; optoelectronics; quantum information