A1 Journal article (refereed)
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs (2023)

Martinella, C., Bathen, M., Javanainen, A., & Grossner, U. (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum, 1090, 179-184. https://doi.org/10.4028/p-3y3lv4

JYU authors or editors

Publication details

All authors or editors: Martinella, Corinna; Bathen, Marianne; Javanainen, Arto; Grossner, Ulrike

Journal or series: Materials Science Forum

ISSN: 0255-5476

eISSN: 1662-9760

Publication year: 2023

Publication date: 31/05/2023

Volume: 1090

Pages range: 179-184

Publisher: Trans Tech Publications

Publication country: Switzerland

Publication language: English

DOI: https://doi.org/10.4028/p-3y3lv4

Publication open access: Openly available

Publication channel open access: Partially open access channel

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/88279

Abstract

Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.

Keywords: ionising radiation; semiconductors; electronic components; transistors; radiation physics

Contributing organizations

Ministry reporting: Yes

Reporting Year: 2023

Preliminary JUFO rating: 1