A4 Article in conference proceedings
Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM (2012)

Grürmann, K., Herrmann, M., Gliem, F., Schmidt, H., Leibeling, G., Kettunen, H., & Ferlet-Cavrois, V. (2012). Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM. In 2012 IEEE Radiation Effects Data Workshop (REDW). IEEE. IEEE Radiation Effects Data Workshop record. https://doi.org/10.1109/REDW.2012.6353718

JYU authors or editors

Publication details

All authors or editors: Grürmann, K.; Herrmann, M.; Gliem, F.; Schmidt, H.; Leibeling, G.; Kettunen, Heikki; Ferlet-Cavrois, V.

Parent publication: 2012 IEEE Radiation Effects Data Workshop (REDW)

ISBN: 978-1-4673-2730-5

Journal or series: IEEE Radiation Effects Data Workshop record

ISSN: 2154-0519

eISSN: 2154-0535

Publication year: 2012

Publisher: IEEE

Place of Publication: New York

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/REDW.2012.6353718

Publication open access: Not open

Publication channel open access: 

Additional information: part of IEEE Nuclear and Space Radiation Effects Conference

Keywords: flash memories

Free keywords: DRAM chips; NAND circuits; radiation hardening (electronics)

Contributing organizations

Ministry reporting: Yes

Reporting Year: 2012

JUFO rating: 1