A1 Journal article (refereed)
Why are hydrogen ions best for MeV ion beam lithography? (2013)

Norarat, R., Puttaraksa, N., Napari, M., Sagari A.R. , A., Laitinen, M., Sajavaara, T., . . . Whitlow, H. (2013). Why are hydrogen ions best for MeV ion beam lithography?. Microelectronic Engineering, 102, 22-24. doi:10.1016/j.mee.2012.02.012

JYU authors or editors

Publication details

All authors or editors: Norarat, Rattanaporn; Puttaraksa, Nitipon; Napari, Mari; Sagari A.R. , Ananda; Laitinen, Mikko; Sajavaara, Timo; Yotprayoonsak, Peerapong; Pettersson, Mika; Chienthavorn, Orapin; Whitlow, Harry

Journal or series: Microelectronic Engineering

ISSN: 0167-9317

Publication year: 2013

Volume: 102

Issue number: 0

Pages range: 22-24

Publisher: Elsevier

Place of Publication: Amsterdam

Publication country: Netherlands

Publication language: English

DOI: https://doi.org/10.1016/j.mee.2012.02.012

Persistent website address: http://www.sciencedirect.com/science/article/pii/S0167931712000329

Open Access: Publication channel is not openly available

Additional information: Selected Papers from the Nanoscale Imaging, Fabrication and Materials Modification using Ion Beams symposium - ICMAT 2011

Keywords: lithography

Free keywords: MeV ion beam lithography; PMMA; Chain-scission; Raman spectroscopy; AFM; ion beam; Raman

Contributing organizations

Other organizations:

Ministry reporting: Yes

Reporting Year: 2013

JUFO rating: 1

Last updated on 2020-16-10 at 20:05