A1 Journal article (refereed)
Why are hydrogen ions best for MeV ion beam lithography? (2013)
Norarat, R., Puttaraksa, N., Napari, M., Sagari A.R. , A., Laitinen, M., Sajavaara, T., . . . Whitlow, H. (2013). Why are hydrogen ions best for MeV ion beam lithography?. Microelectronic Engineering, 102, 22-24. doi:10.1016/j.mee.2012.02.012
JYU authors or editors
Publication details
All authors or editors: Norarat, Rattanaporn; Puttaraksa, Nitipon; Napari, Mari; Sagari A.R. , Ananda; Laitinen, Mikko; Sajavaara, Timo; Yotprayoonsak, Peerapong; Pettersson, Mika; Chienthavorn, Orapin; Whitlow, Harry
Journal or series: Microelectronic Engineering
ISSN: 0167-9317
Publication year: 2013
Volume: 102
Issue number: 0
Pages range: 22-24
Publisher: Elsevier
Place of Publication: Amsterdam
Publication country: Netherlands
Publication language: English
DOI: https://doi.org/10.1016/j.mee.2012.02.012
Persistent website address: http://www.sciencedirect.com/science/article/pii/S0167931712000329
Open Access: Publication channel is not openly available
Additional information: Selected Papers from the Nanoscale Imaging, Fabrication and Materials Modification using Ion Beams symposium - ICMAT 2011
Keywords: lithography
Free keywords: MeV ion beam lithography; PMMA; Chain-scission; Raman spectroscopy; AFM; ion beam; Raman
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2013
JUFO rating: 1