A1 Journal article (refereed)
Why are hydrogen ions best for MeV ion beam lithography? (2013)

Norarat, R., Puttaraksa, N., Napari, M., Sagari A.R., A., Laitinen, M., Sajavaara, T., Yotprayoonsak, P., Pettersson, M., Chienthavorn, O., & Whitlow, H. (2013). Why are hydrogen ions best for MeV ion beam lithography?. Microelectronic Engineering, 102, 22-24. https://doi.org/10.1016/j.mee.2012.02.012

JYU authors or editors

Publication details

All authors or editors: Norarat, Rattanaporn; Puttaraksa, Nitipon; Napari, Mari; Sagari A.R. , Ananda; Laitinen, Mikko; Sajavaara, Timo; Yotprayoonsak, Peerapong; Pettersson, Mika; Chienthavorn, Orapin; Whitlow, Harry

Journal or series: Microelectronic Engineering

ISSN: 0167-9317

eISSN: 1873-5568

Publication year: 2013

Volume: 102

Issue number: 0

Pages range: 22-24

Publisher: Elsevier

Place of Publication: Amsterdam

Publication country: Netherlands

Publication language: English

DOI: https://doi.org/10.1016/j.mee.2012.02.012

Persistent website address: http://www.sciencedirect.com/science/article/pii/S0167931712000329

Publication open access: Not open

Publication channel open access:

Additional information: Selected Papers from the Nanoscale Imaging, Fabrication and Materials Modification using Ion Beams symposium - ICMAT 2011

Keywords: lithography

Free keywords: MeV ion beam lithography; PMMA; Chain-scission; Raman spectroscopy; AFM; ion beam; Raman

Contributing organizations

Ministry reporting: Yes

Reporting Year: 2013

JUFO rating: 1