A1 Journal article (refereed)
Why are hydrogen ions best for MeV ion beam lithography? (2013)
Norarat, R., Puttaraksa, N., Napari, M., Sagari A.R., A., Laitinen, M., Sajavaara, T., Yotprayoonsak, P., Pettersson, M., Chienthavorn, O., & Whitlow, H. (2013). Why are hydrogen ions best for MeV ion beam lithography?. Microelectronic Engineering, 102, 22-24. https://doi.org/10.1016/j.mee.2012.02.012
JYU authors or editors
Publication details
All authors or editors: Norarat, Rattanaporn; Puttaraksa, Nitipon; Napari, Mari; Sagari A.R. , Ananda; Laitinen, Mikko; Sajavaara, Timo; Yotprayoonsak, Peerapong; Pettersson, Mika; Chienthavorn, Orapin; Whitlow, Harry
Journal or series: Microelectronic Engineering
ISSN: 0167-9317
eISSN: 1873-5568
Publication year: 2013
Volume: 102
Issue number: 0
Pages range: 22-24
Publisher: Elsevier
Place of Publication: Amsterdam
Publication country: Netherlands
Publication language: English
DOI: https://doi.org/10.1016/j.mee.2012.02.012
Persistent website address: http://www.sciencedirect.com/science/article/pii/S0167931712000329
Publication open access: Not open
Publication channel open access:
Additional information: Selected Papers from the Nanoscale Imaging, Fabrication and Materials Modification using Ion Beams symposium - ICMAT 2011
Keywords: lithography (graphics)
Free keywords: MeV ion beam lithography; PMMA; Chain-scission; Raman spectroscopy; AFM; ion beam; Raman
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2013
JUFO rating: 1
- Accelerator Laboratory (Department of Physics PHYS, JYFL) JYFL-ACCLAB
- Physical Chemistry (Department of Chemistry CHEM) KEF
- Nanoscience Center (Department of Physics PHYS, JYFL) (Faculty of Mathematics and Science) (Department of Chemistry CHEM) (Department of Biological and Environmental Science BIOENV) NSC