A1 Journal article (refereed)
Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process (2016)


Sarnet, T., Hatanpää, T., Laitinen, M., Sajavaara, T., Mizohata, K., Ritala, M., & Leskelä, M. (2016). Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process. Journal of Materials Chemistry C, 4 (3), 449-454. doi:10.1039/C5TC03079J


JYU authors or editors


Publication details

All authors or editors: Sarnet, Tiina; Hatanpää, Timo; Laitinen, Mikko; Sajavaara, Timo; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku

Journal or series: Journal of Materials Chemistry C

ISSN: 2050-7526

Publication year: 2016

Volume: 4

Issue number: 3

Pages range: 449-454

Publisher: RSC Publications

Publication country: United Kingdom

Publication language: English

DOI: https://doi.org/10.1039/C5TC03079J

Open Access: Publication channel is not openly available


Keywords: gallium arsenide

Free keywords: amorphous films; stoichiometric films; compound semiconductors


Contributing organizations

Other organizations:


Ministry reporting: Yes

Reporting Year: 2016

JUFO rating: 1


Last updated on 2020-17-10 at 19:06