A1 Journal article (refereed)
Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process (2016)
Sarnet, T., Hatanpää, T., Laitinen, M., Sajavaara, T., Mizohata, K., Ritala, M., & Leskelä, M. (2016). Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process. Journal of Materials Chemistry C, 4 (3), 449-454. doi:10.1039/C5TC03079J
JYU authors or editors
Publication details
All authors or editors: Sarnet, Tiina; Hatanpää, Timo; Laitinen, Mikko; Sajavaara, Timo; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku
Journal or series: Journal of Materials Chemistry C
ISSN: 2050-7526
Publication year: 2016
Volume: 4
Issue number: 3
Pages range: 449-454
Publisher: RSC Publications
Publication country: United Kingdom
Publication language: English
DOI: https://doi.org/10.1039/C5TC03079J
Open Access: Publication channel is not openly available
Keywords: gallium arsenide
Free keywords: amorphous films; stoichiometric films; compound semiconductors
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2016
JUFO rating: 1