A1 Journal article (refereed)
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence (2017)

Javanainen, A., Galloway, K. F., Nicklaw, C., Bosser, A., Ferlet-Cavrois, V., Lauenstein, J.-M., Pintacuda, F., Reed, R. A., Schrimpf, R. D., Weller, R. A., & Virtanen, A. (2017). Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence. IEEE Transactions on Nuclear Science, 64(1), 415-420. https://doi.org/10.1109/TNS.2016.2616921

JYU authors or editors

Publication details

All authors or editors: Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre; Ferlet-Cavrois, Véronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronal D.; Weller, Robert A.; et al.

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2017

Volume: 64

Issue number: 1

Pages range: 415-420

Publisher: Institute of Electrical and Electronics Engineers

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/TNS.2016.2616921

Publication open access: Not open

Publication channel open access: 

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/53211

Free keywords: current-voltage characteristics; ion radiation effects; modeling; power semiconductor devices; schottky diodes; silicon carbide

Contributing organizations

Ministry reporting: Yes

VIRTA submission year: 2017

JUFO rating: 1