A1 Journal article (refereed)
Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation (2017)


Bao, Y., Laitinen, M., Sajavaara, T., & Savin, H. (2017). Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation. Advanced Electronic Materials, 3(6), Article 1600491. https://doi.org/10.1002/aelm.201600491


JYU authors or editors


Publication details

All authors or editors: Bao, Yameng; Laitinen, Mikko; Sajavaara, Timo; Savin, Hele

Journal or series: Advanced Electronic Materials

ISSN: 2199-160X

eISSN: 2199-160X

Publication year: 2017

Volume: 3

Issue number: 6

Article number: 1600491

Publisher: Wiley

Publication country: Germany

Publication language: English

DOI: https://doi.org/10.1002/aelm.201600491

Publication open access: Not open

Publication channel open access: 

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/56099

Additional information: Special Issue: Materials Platform at Aalto University


Keywords: ; ozone

Free keywords: Al2O3; ALD; dimethylaluminum chloride; silicon surface passivation


Contributing organizations

Other organizations:


Ministry reporting: Yes

VIRTA submission year: 2017

JUFO rating: 0


Last updated on 2024-11-10 at 20:31