A1 Journal article (refereed)
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells (2017)


Bagatin, M., Gerardin, S., Paccagnella, A., Visconti, A., Virtanen, A., Kettunen, H., Costantino, A., Ferlet-Cavrois, V., & Zadeh, A. (2017). Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells. IEEE Transactions on Nuclear Science, 64(1), 464-470. https://doi.org/10.1109/TNS.2016.2637571


JYU authors or editors


Publication details

All authors or editorsBagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Visconti, Angelo; Virtanen, Ari; Kettunen, Heikki; Costantino, Alessandra; Ferlet-Cavrois, Véronique; Zadeh, Ali

Journal or seriesIEEE Transactions on Nuclear Science

ISSN0018-9499

eISSN1558-1578

Publication year2017

Volume64

Issue number1

Pages range464-470

PublisherIEEE

Publication countryUnited States

Publication languageEnglish

DOIhttps://doi.org/10.1109/TNS.2016.2637571

Publication open accessNot open

Publication channel open access

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/54716


Keywordsflash memoriesprotons

Free keywordsfloating gate devices; single event effects


Contributing organizations


Ministry reportingYes

VIRTA submission year2017

JUFO rating1


Last updated on 2024-11-10 at 19:45