A1 Journal article (refereed)
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells (2017)
Bagatin, M., Gerardin, S., Paccagnella, A., Visconti, A., Virtanen, A., Kettunen, H., Costantino, A., Ferlet-Cavrois, V., & Zadeh, A. (2017). Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells. IEEE Transactions on Nuclear Science, 64(1), 464-470. https://doi.org/10.1109/TNS.2016.2637571
JYU authors or editors
Publication details
All authors or editors: Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Visconti, Angelo; Virtanen, Ari; Kettunen, Heikki; Costantino, Alessandra; Ferlet-Cavrois, Véronique; Zadeh, Ali
Journal or series: IEEE Transactions on Nuclear Science
ISSN: 0018-9499
eISSN: 1558-1578
Publication year: 2017
Volume: 64
Issue number: 1
Pages range: 464-470
Publisher: IEEE
Publication country: United States
Publication language: English
DOI: https://doi.org/10.1109/TNS.2016.2637571
Publication open access: Not open
Publication channel open access:
Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/54716
Keywords: flash memories; protons
Free keywords: floating gate devices; single event effects
Contributing organizations
Ministry reporting: Yes
VIRTA submission year: 2017
JUFO rating: 1