A1 Journal article (refereed)
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices (2018)


Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., & Hull, B. (2018). Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices. IEEE Transactions on Nuclear Science, 65(1), 256-261. https://doi.org/10.1109/TNS.2017.2782227


JYU authors or editors


Publication details

All authors or editorsWitulski, A. F.; Arslanbekov, R.; Raman, A.; Schrimpf, R. D.; Sternberg, A.; Galloway, K. F.; Javanainen, Arto; Grider, D.; Lichtenwalner, D. J.; Hull, B.

Journal or seriesIEEE Transactions on Nuclear Science

ISSN0018-9499

eISSN1558-1578

Publication year2018

Volume65

Issue number1

Pages range256-261

PublisherInstitute of Electrical and Electronics Engineers

Publication countryUnited States

Publication languageEnglish

DOIhttps://doi.org/10.1109/TNS.2017.2782227

Publication open accessNot open

Publication channel open access

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/56909


Free keywordssingle event effects; heavy ions; silicon carbide; power diodes; junction barrier schottky (JBS) diode; single-event burnout; thermal coefficients of silicon carbide


Contributing organizations


Ministry reportingYes

Reporting Year2018

JUFO rating1


Last updated on 2024-08-01 at 21:25