A1 Journal article (refereed)
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers (2018)
Kupsc, P., Javanainen, A., Ferlet-Cavrois, V., Muschitiello, M., Barnes, A., Zadeh, A., Calcutt, J., Poivey, C., Stieglauer, H., & Voss, K.-O. (2018). Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers. IEEE Transactions on Nuclear Science, 65(2), 732-738. https://doi.org/10.1109/TNS.2018.2791564
JYU authors or editors
Publication details
All authors or editors: Kupsc, Pawel; Javanainen, Arto; Ferlet-Cavrois, Véronique; Muschitiello, Michele; Barnes, Andrew; Zadeh, Ali; Calcutt, Jordan; Poivey, Christian; Stieglauer, Hermann; Voss, Kay-Obbe
Journal or series: IEEE Transactions on Nuclear Science
ISSN: 0018-9499
eISSN: 1558-1578
Publication year: 2018
Volume: 65
Issue number: 2
Pages range: 732-738
Publisher: Institute of Electrical and Electronics Engineers
Publication country: United States
Publication language: English
DOI: https://doi.org/10.1109/TNS.2018.2791564
Publication open access: Not open
Publication channel open access:
Keywords: electronic components; capacitors; radiation physics
Free keywords: Metal–insulator–metal (MIM) devices; metal–insulator–semiconductor (MIS) devices; single event effects (SEEs); single event gate rupture
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2018
JUFO rating: 1