A4 Article in conference proceedings
Effects of high-energy electrons in advanced NAND flash memories (2016)


Bagatin, M., Gerardin, S., Paccagnella, A., Costantino, A., Ferlet-Cavrois, V., Virtanen, A., Kettunen, H., & Wang, P. (2016). Effects of high-energy electrons in advanced NAND flash memories. In RADECS 2016 : Proceedings of the 16th European Conference on Radiation and Its Effects on Components and Systems. IEEE. https://doi.org/10.1109/RADECS.2016.8093108


JYU authors or editors


Publication details

All authors or editors: Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Costantino, Alessandra; Ferlet-Cavrois, Véronique; Virtanen, Ari; Kettunen, Heikki; Wang, Pierre

Parent publication: RADECS 2016 : Proceedings of the 16th European Conference on Radiation and Its Effects on Components and Systems

ISBN: 978-1-5090-4366-8

Publication year: 2016

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/RADECS.2016.8093108

Publication open access: Not open

Publication channel open access:

Additional information: 16th European Conference on Radiation and Its Effects on Components and Systems. September 19-23, 2016, Bremen, Germany.


Keywords: radiation physics; ionising radiation; electrons; flash memories


Contributing organizations


Ministry reporting: Yes

Preliminary JUFO rating: 1


Last updated on 2021-08-06 at 15:08