A1 Journal article (refereed)
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes (2018)


Javanainen, A., Muinos, H. V., Nordlund, K., Galloway, K. F., Turowski, M., & Schrimpf, R. D. (2018). Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes. IEEE Transactions on Device and Materials Reliability, 18(3), 481-483. https://doi.org/10.1109/TDMR.2018.2842253


JYU authors or editors


Publication details

All authors or editors: Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D.

Journal or series: IEEE Transactions on Device and Materials Reliability

ISSN: 1530-4388

eISSN: 1558-2574

Publication year: 2018

Volume: 18

Issue number: 3

Pages range: 481-483

Publisher: Institute of Electrical and Electronics Engineers

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/TDMR.2018.2842253

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/59634


Keywords: ions; ionising radiation; modelling (creation related to information); semiconductors

Free keywords: ion radiation effects; modeling; power semiconductor devices,; Schottky diodes; silicon carbide


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2018

JUFO rating: 1


Last updated on 2021-09-08 at 13:02