A1 Journal article (refereed)
Failure Estimates for SiC Power MOSFETs in Space Electronics (2018)

Galloway, K. F., Witulski, A. F., Schrimpf, R. D., Sternberg, A. L., Ball, D. R., Javanainen, A., Reed, R. A., Sierawski, B. D., & Lauenstein, J.-M. (2018). Failure Estimates for SiC Power MOSFETs in Space Electronics. Aerospace, 5(3), 67. https://doi.org/10.3390/aerospace5030067

JYU authors or editors

Publication details

All authors or editors: Galloway, Kenneth F.; Witulski, Arthur F.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Ball, Dennis R.; Javanainen, Arto; Reed, Robert A.; Sierawski, Brian D.; Lauenstein, Jean-Marie

Journal or series: Aerospace

ISSN: 2226-4310

eISSN: 2226-4310

Publication year: 2018

Volume: 5

Issue number: 3

Pages range: 67

Publisher: MDPI

Publication country: Switzerland

Publication language: English

DOI: https://doi.org/10.3390/aerospace5030067

Publication open access: Openly available

Publication channel open access: Open Access channel

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/58830

Additional information: This article belongs to the Special Issue Challenges in Reliability Analysis of Aerospace Electronics.

Keywords: radiation physics; transistors; space technology

Free keywords: single event effects; heavy ions; silicon carbide; single-event burnout; power devices; power MOSFETs; reliability; failure rates

Contributing organizations

Ministry reporting: Yes

VIRTA submission year: 2018

JUFO rating: 1