A1 Journal article (refereed)
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry (2019)

van Dorp, D. H., Arnauts, S., Laitinen, M., Sajavaara, T., Meersschaut, J., Conard, T., & Kelly, J. J. (2019). Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry. Applied Surface Science, 465, 596-606. https://doi.org/10.1016/j.apsusc.2018.09.181

JYU authors or editors

Publication details

All authors or editors: van Dorp, Dennis H.; Arnauts, Sophia; Laitinen, Mikko; Sajavaara, Timo; Meersschaut, Johan; Conard, Thierry; Kelly, John J.

Journal or series: Applied Surface Science

ISSN: 0169-4332

eISSN: 1873-5584

Publication year: 2019

Volume: 465

Issue number: 0

Pages range: 596-606

Publisher: Elsevier BV

Publication country: Netherlands

Publication language: English

DOI: https://doi.org/10.1016/j.apsusc.2018.09.181

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/59848

Keywords: nanoelectronics; semiconductors; surface chemistry; reaction mechanisms

Free keywords: nanoscale etching; GaAs; InP; III-V oxide

Contributing organizations

Ministry reporting: Yes

Reporting Year: 2019

Preliminary JUFO rating: 1