A1 Journal article (refereed)
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry (2019)


van Dorp, D. H., Arnauts, S., Laitinen, M., Sajavaara, T., Meersschaut, J., Conard, T., & Kelly, J. J. (2019). Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution : GaAs and InP, a striking contrast in surface chemistry. Applied Surface Science, 465, 596-606. https://doi.org/10.1016/j.apsusc.2018.09.181


JYU authors or editors


Publication details

All authors or editorsvan Dorp, Dennis H.; Arnauts, Sophia; Laitinen, Mikko; Sajavaara, Timo; Meersschaut, Johan; Conard, Thierry; Kelly, John J.

Journal or seriesApplied Surface Science

ISSN0169-4332

eISSN1873-5584

Publication year2019

Volume465

Issue number0

Pages range596-606

PublisherElsevier BV

Publication countryNetherlands

Publication languageEnglish

DOIhttps://doi.org/10.1016/j.apsusc.2018.09.181

Publication open accessNot open

Publication channel open access

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/59848


Keywordsnanoelectronicssemiconductorssurface chemistryreaction mechanisms

Free keywordsnanoscale etching; GaAs; InP; III-V oxide


Contributing organizations

Other organizations:


Ministry reportingYes

Reporting Year2019

Preliminary JUFO rating1


Last updated on 2024-08-01 at 16:50