A1 Journal article (refereed)
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs (2019)


Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., & Lauenstein, J-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 66(1), 337-343. https://doi.org/10.1109/TNS.2018.2885734


JYU authors or editors


Publication details

All authors or editorsBall, D. R.; Sierawski, B. D.; Galloway, K. F.; Johnson, R. A.; Alles, M. L.; Sternberg, A. L.; Witulski, A. F.; Reed, R. A.; Schrimpf, R. D.; Javanainen, Arto; et al.

Journal or seriesIEEE Transactions on Nuclear Science

ISSN0018-9499

eISSN1558-1578

Publication year2019

Volume66

Issue number1

Pages range337-343

PublisherIEEE

Publication countryUnited States

Publication languageEnglish

DOIhttps://doi.org/10.1109/TNS.2018.2885734

Publication open accessNot open

Publication channel open access

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/66882


Keywordsradiation physicstransistors

Free keywordssilicon carbide; SiC; power; MOSFET; heavy ion; neutron; cross-section; failure in time; FIT; single event burnout; SEB; Monte Carlo; MRED


Contributing organizations


Ministry reportingYes

Reporting Year2019

JUFO rating1


Last updated on 2024-08-01 at 18:29