A1 Journal article (refereed)
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs (2019)
Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., & Lauenstein, J-M. (2019). Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs. IEEE Transactions on Nuclear Science, 66(1), 337-343. https://doi.org/10.1109/TNS.2018.2885734
JYU authors or editors
Publication details
All authors or editors: Ball, D. R.; Sierawski, B. D.; Galloway, K. F.; Johnson, R. A.; Alles, M. L.; Sternberg, A. L.; Witulski, A. F.; Reed, R. A.; Schrimpf, R. D.; Javanainen, Arto; et al.
Journal or series: IEEE Transactions on Nuclear Science
ISSN: 0018-9499
eISSN: 1558-1578
Publication year: 2019
Volume: 66
Issue number: 1
Pages range: 337-343
Publisher: IEEE
Publication country: United States
Publication language: English
DOI: https://doi.org/10.1109/TNS.2018.2885734
Publication open access: Not open
Publication channel open access:
Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/66882
Keywords: radiation physics; transistors
Free keywords: silicon carbide; SiC; power; MOSFET; heavy ion; neutron; cross-section; failure in time; FIT; single event burnout; SEB; Monte Carlo; MRED
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2019
JUFO rating: 1