A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon (2019)
Parashar, P. K., Kinnunen, S., Sajavaara, T., Toppari, J., & Komarala, V. K. (2019). Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon. Solar Energy Materials and Solar Cells, 193, 231-236. https://doi.org/10.1016/j.solmat.2019.01.019
JYU-tekijät tai -toimittajat
Julkaisun tiedot
Julkaisun kaikki tekijät tai toimittajat: Parashar, Piyush K.; Kinnunen, Sami; Sajavaara, Timo; Toppari, Jussi; Komarala, Vamsi K.
Lehti tai sarja: Solar Energy Materials and Solar Cells
ISSN: 0927-0248
eISSN: 1879-3398
Julkaisuvuosi: 2019
Volyymi: 193
Lehden numero: 0
Artikkelin sivunumerot: 231-236
Kustantaja: Elsevier BV
Julkaisumaa: Alankomaat
Julkaisun kieli: englanti
DOI: https://doi.org/10.1016/j.solmat.2019.01.019
Julkaisun avoin saatavuus: Ei avoin
Julkaisukanavan avoin saatavuus:
Tiivistelmä
Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Fight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s−1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s−1). The better SRV with AlOxNy film is due to the collective effect of field-effect passivation by the presence of fixed negative charges, and chemical passivation by the presence of hydrogen within the film. The capacitance-voltage, and conductance measurements also are carried out using metal-oxide-semiconductor structure to determine the fixed negative charge density (Ni,ox), and defect density of states (Dit) in the AlOxNy films. The better surface passivation is attributed to unusually large Ni,ox of ~6.07 × 1012 cm−2, and minimal Dit of ~1.01 × 1011 cm−2-eV−1 owing to the saturation of Si dangling bonds by the hydrogen within the AlOxNy film matrix after the annealing step.
YSO-asiasanat: atomikerroskasvatus; ohutkalvot; nanorakenteet; pii; alumiini
Vapaat asiasanat: black flexible silicon; aluminum oxynitride; surface passivation; thermal atomic layer deposition; time-of-flight elastic recoil detection analysis (ToF-ERDA)
Liittyvät organisaatiot
Hankkeet, joissa julkaisu on tehty
- Ikkunalasiin integroitu aurinkokeräin
- Toppari, Jussi
- Suomen Akatemia
OKM-raportointi: Kyllä
Raportointivuosi: 2019
JUFO-taso: 2