A1 Journal article (refereed)
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs (2019)


Martinella, C., Stark, R., Ziemann, T., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2019). Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs. IEEE Transactions on Nuclear Science, 66(7), 1702-1709. https://doi.org/10.1109/TNS.2019.2907669


JYU authors or editors


Publication details

All authors or editors: Martinella, Corinna; Stark, R.; Ziemann, T.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, Arto

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2019

Volume: 66

Issue number: 7

Pages range: 1702-1709

Publisher: Institute of Electrical and Electronics Engineers

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/TNS.2019.2907669

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/65082


Keywords: ions; degradation; radiation physics; ionising radiation; electronic components; transistors

Free keywords: silicon carbide; MOSFET; radiation effects; logic gates; leakage currents; SiC power MOSFETs; heavy ion irradiation; gate leakage; single event effects


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2019

JUFO rating: 1


Last updated on 2021-08-06 at 19:53