A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films (2019)


Hashemi, F. S. M., Cao, L., Mattelaer, F., Sajavaara, T., van Ommen, J. R., & Detavernier, C. (2019). Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films. Journal of Vacuum Science and Technology A, 37(4), Article 040901. https://doi.org/10.1116/1.5093402


JYU-tekijät tai -toimittajat


Julkaisun tiedot

Julkaisun kaikki tekijät tai toimittajat: Hashemi, Fatemeh S. M.; Cao, LiAo; Mattelaer, Felix; Sajavaara, Timo; van Ommen, J. Ruud; Detavernier, Christophe

Lehti tai sarja: Journal of Vacuum Science and Technology A

ISSN: 0734-2101

eISSN: 1520-8559

Julkaisuvuosi: 2019

Volyymi: 37

Lehden numero: 4

Artikkelinumero: 040901

Kustantaja: AIP Publishing LLC

Julkaisumaa: Yhdysvallat (USA)

Julkaisun kieli: englanti

DOI: https://doi.org/10.1116/1.5093402

Julkaisun avoin saatavuus: Ei avoin

Julkaisukanavan avoin saatavuus:

Julkaisu on rinnakkaistallennettu (JYX): https://jyx.jyu.fi/handle/123456789/65155


Tiivistelmä

Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for the deposition of alumina, different chemicals have been investigated over the years to replace it. The authors have investigated the use of aluminum tri-isopropoxide (TIPA) as an alternative alkoxide precursor for the safe and cost-effective deposition of alumina. In this work, TIPA is used as a stable Al source for atomic layer deposition (ALD) of Al2O3 when different oxidizing agents including water, oxygen plasma, water plasma, and ozone are employed. The authors have explored the deposition of Al2O3 using TIPA in ALD systems operating in vacuum and atmospheric pressure conditions. For thermal and plasma processes in vacuum ALD, a growth rate of 1.1–2 Å/cycle achieved over a range of 140–300 °C is shown. Film density, roughness, and composition have been tested using various characterization techniques confirming comparable film properties to the thermal ALD of trimethylaluminum and water. The thermal water process at atmospheric pressure ALD (AP-ALD) resulted in a growth rate of up to 1.1 Å/cycle with residual carbon below the XPS detection limit. AP-ALD on nanoparticles shows different growth modes on TiO2 versus SiO2 nanoparticle surfaces confirmed by transmission electron microscopy analysis. Using TIPA as an ALD precursor would open up the possibility for a safer and cost-effective process for deposition of Al2O3 in various applications.


Vapaat asiasanat: nanohiukkaset; plasmafysiikka; atomikerroskasvatus


Liittyvät organisaatiot

JYU-yksiköt:


OKM-raportointi: Kyllä

Raportointivuosi: 2019

JUFO-taso: 1


Viimeisin päivitys 2021-10-06 klo 17:55