A1 Journal article (refereed)
Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films (2019)

Hashemi, F. S. M., Cao, L., Mattelaer, F., Sajavaara, T., van Ommen, J. R., & Detavernier, C. (2019). Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films. Journal of Vacuum Science and Technology A, 37(4), Article 040901. https://doi.org/10.1116/1.5093402

JYU authors or editors

Publication details

All authors or editorsHashemi, Fatemeh S. M.; Cao, LiAo; Mattelaer, Felix; Sajavaara, Timo; van Ommen, J. Ruud; Detavernier, Christophe

Journal or seriesJournal of Vacuum Science and Technology A



Publication year2019


Issue number4

Article number040901

PublisherAIP Publishing LLC

Publication countryUnited States

Publication languageEnglish


Publication open accessNot open

Publication channel open access

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/65155


Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for the deposition of alumina, different chemicals have been investigated over the years to replace it. The authors have investigated the use of aluminum tri-isopropoxide (TIPA) as an alternative alkoxide precursor for the safe and cost-effective deposition of alumina. In this work, TIPA is used as a stable Al source for atomic layer deposition (ALD) of Al2O3 when different oxidizing agents including water, oxygen plasma, water plasma, and ozone are employed. The authors have explored the deposition of Al2O3 using TIPA in ALD systems operating in vacuum and atmospheric pressure conditions. For thermal and plasma processes in vacuum ALD, a growth rate of 1.1–2 Å/cycle achieved over a range of 140–300 °C is shown. Film density, roughness, and composition have been tested using various characterization techniques confirming comparable film properties to the thermal ALD of trimethylaluminum and water. The thermal water process at atmospheric pressure ALD (AP-ALD) resulted in a growth rate of up to 1.1 Å/cycle with residual carbon below the XPS detection limit. AP-ALD on nanoparticles shows different growth modes on TiO2 versus SiO2 nanoparticle surfaces confirmed by transmission electron microscopy analysis. Using TIPA as an ALD precursor would open up the possibility for a safer and cost-effective process for deposition of Al2O3 in various applications.

Free keywordsnanoparticles; thin films; plasma processing; atomic layer deposition

Contributing organizations

Ministry reportingYes

Reporting Year2019

JUFO rating1

Last updated on 2024-10-05 at 23:47