A1 Journal article (refereed)
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes (2020)


Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Reed, R. A., Schrimpf, R. D., Alles, J. M., Lauenstein, J. M., Javanainen, A., Raman, A., Chakraborty, P. S., & Arslanbekov, R.R. (2020). Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes. IEEE Transactions on Nuclear Science, 67(1), 135-139. https://doi.org/10.1109/TNS.2019.2947866


JYU authors or editors


Publication details

All authors or editors: Johnson, R. A.; Witulski, A. F.; Ball, D. R.; Galloway, K. F.; Sternberg, A. L.; Reed, R. A.; Schrimpf, R. D.; Alles, J. M.; Lauenstein, J. M.; Javanainen, A.; et al.

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2020

Volume: 67

Issue number: 1

Pages range: 135-139

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/TNS.2019.2947866

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/65926


Abstract

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.


Keywords: radiation physics; electronic components; semiconductors; diodes

Free keywords: Schottky diodes; Silicon carbide; single-event effects; vertical MOSFET


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2020

JUFO rating: 1


Last updated on 2021-09-08 at 08:42