A4 Artikkeli konferenssijulkaisussa
Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory (2019)
Luza, L. M., Bosser, A., Gupta, V., Javanainen, A., Mohammadzadeh, A., & Dilillo, L. (2019). Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory. In DFT 2019 : Proceedings of the 32nd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems. IEEE. Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems. https://doi.org/10.1109/DFT.2019.8875475
JYU-tekijät tai -toimittajat
Julkaisun tiedot
Julkaisun kaikki tekijät tai toimittajat: Luza, Lucas Matana; Bosser, Alexandre; Gupta, Viyas; Javanainen, Arto; Mohammadzadeh, Ali; Dilillo, Luigi
Emojulkaisu: DFT 2019 : Proceedings of the 32nd IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems
Konferenssi:
- IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)
Konferenssin paikka ja aika: Noordwijk, Netherlands, 2.-4.10.2019
ISBN: 978-1-7281-2260-1
Lehti tai sarja: Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
ISSN: 1550-5774
eISSN: 2377-7966
Julkaisuvuosi: 2019
Kustantaja: IEEE
Julkaisumaa: Yhdysvallat (USA)
Julkaisun kieli: englanti
DOI: https://doi.org/10.1109/DFT.2019.8875475
Julkaisun avoin saatavuus: Ei avoin
Julkaisukanavan avoin saatavuus:
Tiivistelmä
Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.
YSO-asiasanat: säteilyfysiikka; ionisoiva säteily; flash-muistit
Liittyvät organisaatiot
OKM-raportointi: Kyllä
Raportointivuosi: 2019
JUFO-taso: 1
