A1 Journal article (refereed)
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes (2020)


Ball, D., Galloway, K., Johnson, R., Alles, M., Sternberg, A., Sierawski, B., Witulski, A., Reed, R., Schrimpf, R., Hutson, J., Javanainen, A., & Lauenstein, J.-M. (2020). Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes. IEEE Transactions on Nuclear Science, 67(1), 22-28. https://doi.org/10.1109/TNS.2019.2955922


JYU authors or editors


Publication details

All authors or editors: Ball, D.R.; Galloway, K.F.; Johnson, R.A.; Alles, M.L.; Sternberg, A.L.; Sierawski, B.D.; Witulski, A.F.; Reed, R.A.; Schrimpf, R.D.; Hutson, J.M.; et al.

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2020

Volume: 67

Issue number: 1

Pages range: 22-28

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/TNS.2019.2955922

Publication open access: Not open

Publication channel open access:

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/68570


Abstract

Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.


Keywords: radiation physics; ionising radiation; semiconductors; diodes

Free keywords: silicon carbide; SiC; power; MOSFET; diode; heavy ion; single-event burnout; SEB; degradation


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2020

JUFO rating: 1


Last updated on 2021-17-09 at 16:26