D3 Article in professional conference proceedings
Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes (2019)


Celano, U., Hantschel, T., Boehme, T., Kanniainen, A., Wouters, L., Bender, H., Bosman, N., Drijbooms, C., Folkersma, S., Paredis, K., Vandervorst, W., & der Heide, P. V. (2019). Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes. In IEDM 2019 : International Electron Devices Meeting : Technical Digest (pp. 5.1.1-5.1.4). IEEE. https://doi.org/10.1109/IEDM19573.2019.8993661


JYU authors or editors


Publication details

All authors or editors: Celano, U.; Hantschel, T.; Boehme, T.; Kanniainen, A.; Wouters, L.; Bender, H.; Bosman, N.; Drijbooms, C.; Folkersma, S.; Paredis, K.; et al.

Parent publication: IEDM 2019 : International Electron Devices Meeting : Technical Digest

Conference:

  • Annual IEEE International Electron Devices Meeting

Place and date of conference: San Francisco, USA, 7.-11.12.2019

ISBN: 978-1-7281-4033-9

eISBN: 978-1-7281-4032-2

Publication year: 2019

Pages range: 5.1.1-5.1.4

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/IEDM19573.2019.8993661

Publication open access: Not open

Publication channel open access:


Abstract

A new method is proposed to enable high-throughput and high-resolution electrical atomic force microscopy in nanoelectronics. Using a reversed pathway of operation, our technique yields a shorter time-to-data (<10x), enhanced dataset statistics and nm-precise resolution; as herein demonstrated for two- and three-dimensional carrier profiling in fin structures of advanced nodes.


Keywords: nanoelectronics; atomic force microscopy


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2020


Last updated on 2021-07-07 at 21:39