B3 Non-refereed conference proceedings
Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM (2020)


Luza, Lucas Matana; Söderström, Daniel; Puchner, Helmut; Alía, Ruben Garcia; Letiche, Manon; Bosio, Alberto; Dilillo, Luigi (2020). Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM. In DTIS 2020 : Proceedings of the 15th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era. IEEE. DOI: 10.1109/DTIS48698.2020.9080918


JYU authors or editors


Publication details

All authors or editors: Luza, Lucas Matana; Söderström, Daniel; Puchner, Helmut; Alía, Ruben Garcia; Letiche, Manon; Bosio, Alberto; Dilillo, Luigi

Parent publication: DTIS 2020 : Proceedings of the 15th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era

Conference:

IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era

Place and date of conference: Marrakesh, Morocco, 1.-3.4.2020

ISBN: 978-1-7281-5427-5

eISBN: 978-1-7281-5426-8

Publication year: 2020

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: http://doi.org/10.1109/DTIS48698.2020.9080918

Open Access: Publication channel is not openly available

Additional information: Electronic ISBN: 978-1-7281-5426-8
USB ISBN: 978-1-7281-5425-1
Print on Demand(PoD) ISBN: 978-1-7281-5427-5


Abstract

In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.


Keywords: radiation physics; electronic components; random access memories

Free keywords: DRAM; HyperRAM; Neutron; SEE; Self-Refresh


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Related projects


Ministry reporting: Yes

Reporting Year: 2020


Last updated on 2020-29-09 at 08:54