A1 Journal article (refereed)
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs (2020)
Martinella, C., Ziemann, T., Stark, R., Tsibizov, A., Voss, K. O., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2020). Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs. IEEE Transactions on Nuclear Science, 67(7), 1381-1389. https://doi.org/10.1109/TNS.2020.3002729
JYU authors or editors
Publication details
All authors or editors: Martinella, C.; Ziemann, T.; Stark, R.; Tsibizov, A.; Voss, K. O.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, A.
Journal or series: IEEE Transactions on Nuclear Science
ISSN: 0018-9499
eISSN: 1558-1578
Publication year: 2020
Volume: 67
Issue number: 7
Pages range: 1381-1389
Publisher: IEEE
Publication country: United States
Publication language: English
DOI: https://doi.org/10.1109/TNS.2020.3002729
Publication open access: Openly available
Publication channel open access: Partially open access channel
Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/70403
Abstract
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial SiC VD-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded) only the gate-oxide (at JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain-source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights for the understanding of basic phenomena of Single Event Effects in SiC power devices.
Keywords: radiation physics; ionising radiation; semiconductors
Free keywords: SiC VD-MOSFET; heavy-ion; single event effect; microbeam; leakage current degradation; SELC
Contributing organizations
Ministry reporting: Yes
Reporting Year: 2020
JUFO rating: 1
