A1 Journal article (refereed)
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs (2020)


Martinella, C., Ziemann, T., Stark, R., Tsibizov, A., Voss, K. O., Alia, R. G., Kadi, Y., Grossner, U., & Javanainen, A. (2020). Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs. IEEE Transactions on Nuclear Science, 67(7), 1381-1389. https://doi.org/10.1109/TNS.2020.3002729


JYU authors or editors


Publication details

All authors or editors: Martinella, C.; Ziemann, T.; Stark, R.; Tsibizov, A.; Voss, K. O.; Alia, R. G.; Kadi, Y.; Grossner, U.; Javanainen, A.

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2020

Volume: 67

Issue number: 7

Pages range: 1381-1389

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/TNS.2020.3002729

Publication open access: Openly available

Publication channel open access: Partially open access channel

Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/70403


Abstract

Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial SiC VD-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded) only the gate-oxide (at JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain-source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights for the understanding of basic phenomena of Single Event Effects in SiC power devices.


Keywords: radiation physics; ionising radiation; semiconductors

Free keywords: SiC VD-MOSFET; heavy-ion; single event effect; microbeam; leakage current degradation; SELC


Contributing organizations


Ministry reporting: Yes

Reporting Year: 2020

JUFO rating: 1


Last updated on 2022-17-06 at 12:18