A1 Journal article (refereed)
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET (2020)


Niskanen, K.; Touboul, A. D.; Coq Germanicus, R.; Michez, A.; Javanainen, A.; Wrobel, F.; Boch, J.; Pouget, V.; Saigne, F.; (2020). Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET. IEEE Transactions on Nuclear Science, 67 (7), 1365-1373. DOI: 10.1109/TNS.2020.2983599


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Publication details

All authors or editors: Niskanen, K.; Touboul, A. D.; Coq Germanicus, R.; Michez, A.; Javanainen, A.; Wrobel, F.; Boch, J.; Pouget, V.; Saigne, F.;

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2020

Volume: 67

Issue number: 7

Pages range: 1365-1373

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: http://doi.org/10.1109/TNS.2020.2983599

Open Access: Publication channel is not openly available


Abstract

The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.


Keywords: neutrons; radiation physics; electronic components

Free keywords: radiation effects; stress; logic gates; silicon carbide; electric breakdown; MOSFET; atmospheric neutrons; power MOSFET; radiation effects; silicon carbide (SiC); single-event burnout (SEB)


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Last updated on 2020-07-08 at 08:11