A4 Article in conference proceedings
New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs (2020)


Witulski, Arthur F.; Ball, Dennis R.; Johnson, Robert A.; Galloway, Kenneth F.; Sternberg, Andrew L.; Alles, Michael L.; Reed, Robert A.; Schrimpf, Ronald D.; Hutson, John M.; Javanainen, Arto et al. (2020). New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs. In Yano, Hiroshi; Ohshima, Takeshi; Eto, Kazuma; Harada, Shinsuke; Mitani, Takeshi; Tanaka, Yasunori (Eds.) ICSCRM 2019 : 18th International Conference on Silicon Carbide and Related Materials, Materials Science Forum, 1004. Trans Tech Publications, 1066-1073. DOI: 10.4028/www.scientific.net/MSF.1004.1066


JYU authors or editors


Publication details

All authors or editors: Witulski, Arthur F.; Ball, Dennis R.; Johnson, Robert A.; Galloway, Kenneth F.; Sternberg, Andrew L.; Alles, Michael L.; Reed, Robert A.; Schrimpf, Ronald D.; Hutson, John M.; Javanainen, Arto; et al.

Parent publication: ICSCRM 2019 : 18th International Conference on Silicon Carbide and Related Materials

Parent publication editors: Yano, Hiroshi; Ohshima, Takeshi; Eto, Kazuma; Harada, Shinsuke; Mitani, Takeshi; Tanaka, Yasunori

Conference:

International Conference on Silicon Carbide and Related Materials

Place and date of conference: Kyoto, Japan, 29.9-4.10.2019

eISBN: 978-3-0357-1579-8

Journal or series: Materials Science Forum

ISSN: 0255-5476

eISSN: 1662-9760

Publication year: 2020

Number in series: 1004

Pages range: 1066-1073

Number of pages in the book: 1196

Publisher: Trans Tech Publications

Publication country: Switzerland

Publication language: English

DOI: http://doi.org/10.4028/www.scientific.net/MSF.1004.1066

Open Access: Publication channel is not openly available


Abstract

Ion-induced leakage current degradation, and single-event burnout may be manifestestations of the same device mechanisms in both silicon carbide power diodes and MOSFETs. In all cases there is a migration of the electrical field from the front body-drain interface to the back epi-drain n+ interface, with a peak exceeding the critical electric field of silicon carbide, causing avalanche generation which enables high short-duration power densities during an approximate 20 psec window after the ion strike. The degradation effect in JBS SiC diodes seems to be independent of the length of the epitaxial region for different voltage-rated diodes.


Keywords: radiation physics; ionising radiation; electric fields; electronic components; diodes; transistors

Free keywords: electric field redistribution; heavy-ions; ion-induced leakage current; Schottky junction barrier diode; single-event burnout; single-events; vertical power MOSFET


Contributing organizations


Ministry reporting: Yes

Preliminary JUFO rating: 1


Last updated on 2020-10-09 at 13:14