A1 Journal article (refereed)
Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineering (2020)
Barthel, A., Roberts, J., Napari, M., Frentrup, M., Huq, T., Kovács, A., Oliver, R., Chalker, P., Sajavaara, T., & Massabuau, F. (2020). Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineering. Micromachines, 11(12), Article 1128. https://doi.org/10.3390/mi11121128
JYU authors or editors
Publication details
All authors or editors: Barthel, Armin; Roberts, Joseph; Napari, Mari; Frentrup, Martin; Huq, Tahmid; Kovács, András; Oliver, Rachel; Chalker, Paul; Sajavaara, Timo; Massabuau, Fabien
Journal or series: Micromachines
eISSN: 2072-666X
Publication year: 2020
Volume: 11
Issue number: 12
Article number: 1128
Publisher: MDPI
Publication country: Switzerland
Publication language: English
DOI: https://doi.org/10.3390/mi11121128
Publication open access: Openly available
Publication channel open access: Open Access channel
Publication is parallel published (JYX): https://jyx.jyu.fi/handle/123456789/73788
Web address of parallel published publication (pre-print): https://arxiv.org/abs/2006.01422
Abstract
The suitability of Ti as a band gap modifier for alpha-Ga2O3 was investigated, taking advantage of the isostructural alpha phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)(2)O-3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality alpha-(TixGa1-x)(2)O-3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% <= x <= 5.3%, the band gap energy varies by similar to 270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on alpha-Ga2O3.
Keywords: semiconductors; thin films; atomic layer deposition; gallium; titanium
Free keywords: gallium oxide; wide band gap semiconductors; solar-blind detection; atomic layer deposition; thin films; alloying; bandgap
Contributing organizations
Ministry reporting: Yes
VIRTA submission year: 2020
JUFO rating: 1