A1 Journal article (refereed)
Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineering (2020)


Barthel, A., Roberts, J., Napari, M., Frentrup, M., Huq, T., Kovács, A., Oliver, R., Chalker, P., Sajavaara, T., & Massabuau, F. (2020). Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineering. Micromachines, 11(12), Article 1128. https://doi.org/10.3390/mi11121128


JYU authors or editors


Publication details

All authors or editorsBarthel, Armin; Roberts, Joseph; Napari, Mari; Frentrup, Martin; Huq, Tahmid; Kovács, András; Oliver, Rachel; Chalker, Paul; Sajavaara, Timo; Massabuau, Fabien

Journal or seriesMicromachines

eISSN2072-666X

Publication year2020

Volume11

Issue number12

Article number1128

PublisherMDPI

Publication countrySwitzerland

Publication languageEnglish

DOIhttps://doi.org/10.3390/mi11121128

Publication open accessOpenly available

Publication channel open accessOpen Access channel

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/73788

Web address of parallel published publication (pre-print)https://arxiv.org/abs/2006.01422


Abstract

The suitability of Ti as a band gap modifier for alpha-Ga2O3 was investigated, taking advantage of the isostructural alpha phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)(2)O-3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality alpha-(TixGa1-x)(2)O-3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% <= x <= 5.3%, the band gap energy varies by similar to 270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on alpha-Ga2O3.


Keywordssemiconductorsthin filmsatomic layer depositiongalliumtitanium

Free keywordsgallium oxide; wide band gap semiconductors; solar-blind detection; atomic layer deposition; thin films; alloying; bandgap


Contributing organizations


Ministry reportingYes

VIRTA submission year2020

JUFO rating1


Last updated on 2024-12-10 at 08:15