A4 Article in conference proceedings
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment (2018)


Johnson, R. A., Witulski, A. F., Ball, D. R., Galloway, K. F., Sternberg, A. L., Zhang, E., Reed, R. A., Schrimpf, R. D., Lauenstein, J.-M., & Javanainen, A. (2018). Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment. In RADECS 2018 : Proceedings of the 18th European Conference on Radiation and Its Effects on Components and Systems. IEEE. https://doi.org/10.1109/RADECS45761.2018.9328733


JYU authors or editors


Publication details

All authors or editors: Johnson, Robert A.; Witulski, Arthur F.; Ball, Dennis R.; Galloway, Kenneth F.; Sternberg, Andrew L.; Zhang, Enxia; Reed, Robert A.; Schrimpf, Ronald D.; Lauenstein, Jean-Marie; Javanainen, Arto

Parent publication: RADECS 2018 : Proceedings of the 18th European Conference on Radiation and Its Effects on Components and Systems

Place and date of conference: Göteborg, Sweden, 15.-21.9.2018

ISBN: 978-1-7281-0217-7

eISBN: 978-1-7281-0216-0

Publication year: 2018

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/RADECS45761.2018.9328733

Publication open access: Not open

Publication channel open access:


Abstract

A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel below a gate. This conclusion is then reinforced using results from prior heavy ion and simulation work done for similar Silicon carbide MOSFETs.


Keywords: radiation physics; electronic components; semiconductors; transistors; diodes

Free keywords: Schottky diodes; silicon carbide; single-event effects; two-photon absorption; vertical MOSFET


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Ministry reporting: Yes

Preliminary JUFO rating: 1


Last updated on 2021-09-06 at 11:56