A1 Journal article (refereed)
Phosphites as precursors in atomic layer deposition thin film synthesis (2021)


Kvamme, K. B., Ruud, A., Weibye, K., Sajavaara, T., & Nilsen, O. (2021). Phosphites as precursors in atomic layer deposition thin film synthesis. Journal of Vacuum Science and Technology A, 39(3), Article 032404. https://doi.org/10.1116/6.0000844


JYU authors or editors


Publication details

All authors or editorsKvamme, Kristian B.; Ruud, Amund; Weibye, Kristian; Sajavaara, Timo; Nilsen, Ola

Journal or seriesJournal of Vacuum Science and Technology A

ISSN0734-2101

eISSN1520-8559

Publication year2021

Volume39

Issue number3

Article number032404

PublisherAmerican Institute of Physics

Publication countryUnited States

Publication languageEnglish

DOIhttps://doi.org/10.1116/6.0000844

Publication open accessOpenly available

Publication channel open accessPartially open access channel

Publication is parallel published (JYX)https://jyx.jyu.fi/handle/123456789/74637


Abstract

We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence, and ion beam analysis for composition analysis, spectroscopic ellipsometry for thickness, and FTIR for local structure.


Keywordsthin filmsatomic layer depositionphosphates

Free keywordsfosfiitit


Contributing organizations


Ministry reportingYes

Reporting Year2021

JUFO rating1


Last updated on 2024-03-04 at 20:06