A1 Journal article (refereed)
Study of SEU sensitivity of SRAM-Based Radiation Monitors in 65 nm CMOS (2021)

Wang, J., Prinzie, J., Coronetti, A., Thys, S., Garcia, A. R., & Leroux, P. (2021). Study of SEU sensitivity of SRAM-Based Radiation Monitors in 65 nm CMOS. IEEE Transactions on Nuclear Science, 68(5), 913-920. https://doi.org/10.1109/tns.2021.3072328

JYU authors or editors

Publication details

All authors or editors: Wang, J.; Prinzie, J.; Coronetti, A.; Thys, S.; Garcia, Alia R.; Leroux, P.

Journal or series: IEEE Transactions on Nuclear Science

ISSN: 0018-9499

eISSN: 1558-1578

Publication year: 2021

Volume: 68

Issue number: 5

Pages range: 913-920

Publisher: IEEE

Publication country: United States

Publication language: English

DOI: https://doi.org/10.1109/tns.2021.3072328

Publication open access: Not open

Publication channel open access: Channel is not openly available

Publication is parallel published: https://limo.libis.be/primo-explore/fulldisplay?docid=LIRIAS3460012&context=L&vid=Lirias&search_scope=Lirias&tab=default_tab&lang=en_US

Abstract

his paper presents an SRAM (Static Random-Access Memory) based flexible radiation monitor. The monitor was fabricated in a 65 nm CMOS technology, it was designed as application-specified integrated circuit, which comprises 768K bits SRAM cells matrix with individual power supply and a digital control core with SPI interface. By adjusting the core voltage of the SRAM matrix, the radiation sensitivity was made flexible. Also, SRAM cells with different threshold voltage were implemented to get further extension on tunable sensitivity range. The monitor has been tested under heavy ions with an LET(Linear Energy Transfer) from 1.5 to 48.5 MeV∙cm2/mg, high-energy (50-186 MeV) and low-energy (0.7-5 MeV) protons, 14-MeV and thermal neutrons. An analysis was performed on how Single-Event Upsets sensitivity changes while tuning the supply voltage under different radiation environments. The results show that the monitor have the potential for space and facility applications.

Keywords: radiation physics; ions; protons; neutrons; monitoring; detectors; random access memories

Free keywords: CMOS; heavy ion; proton beams; radiation monitoring; Single-Event Upsets (SEUs); Static Random-Access Memory (SRAM)

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Ministry reporting: Yes

Reporting Year: 2021

JUFO rating: 1