A4 Artikkeli konferenssijulkaisussa
Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study (2021)
Matana Luza, L., Söderström, D., Pio de Mattos, A. M., Bezerra, E. A., Cazzaniga, C., Kastriotou, M., Poivey, C., & Dilillo, L. (2021). Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study. In DTIS 2021 : Proceedings of the 16th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era. IEEE. https://doi.org/10.1109/DTIS53253.2021.9505143
JYU-tekijät tai -toimittajat
Julkaisun tiedot
Julkaisun kaikki tekijät tai toimittajat: Matana Luza, Lucas; Söderström, Daniel; Pio de Mattos, Andre Martins; Bezerra, Eduardo Augusto; Cazzaniga, Carlo; Kastriotou, Maria; Poivey, Christian; Dilillo, Luigi
Emojulkaisu: DTIS 2021 : Proceedings of the 16th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era
Konferenssi:
- IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era
Konferenssin paikka ja aika: Montpellier, France , 28.-30.6.2021
ISBN: 978-1-6654-3655-7
eISBN: 978-1-6654-3654-0
Julkaisuvuosi: 2021
Ilmestymispäivä: 28.06.2021
Kustantaja: IEEE
Julkaisumaa: Yhdysvallat (USA)
Julkaisun kieli: englanti
DOI: https://doi.org/10.1109/DTIS53253.2021.9505143
Julkaisun avoin saatavuus: Ei avoin
Julkaisukanavan avoin saatavuus:
Julkaisu on rinnakkaistallennettu (JYX): https://jyx.jyu.fi/handle/123456789/78438
Tiivistelmä
This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studied and characterized, presenting the occurrence of single-bit upsets and stuck bits. The cross sections for each type of event and technology node show that the 110 nm model is more sensitive to neutron-induced single-event effects than the other models.
YSO-asiasanat: säteilyfysiikka; avaruustekniikka; muistit (tietotekniikka); käyttömuistit; neutronit
Vapaat asiasanat: Radiation Effects; SDRAM; SEE; Stuck Bits
Liittyvät organisaatiot
Hankkeet, joissa julkaisu on tehty
- Radiation and Reliability Challenges for Electronics Used in Space, Aviation, Ground and Accelerators
- Virtanen, Ari
- Euroopan komissio
OKM-raportointi: Kyllä
Raportointivuosi: 2021
JUFO-taso: 1
